| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film formation method, a cleaning method, and an apparatus thereof for cleanly cleaning a film deposited on a mask upon film formation on a substrate and repeatedly using the mask for film formation on the substrate. <P>SOLUTION: A releasable sacrificial layer 12 is preliminarily formed on a mask body 11 prior to the film formation on the substrate, and a thin film 15 is formed by allowing steam to reach the surface of the substrate 13 using the mask body 11 on which the sacrificial layer 12 is formed. Although the steam also reaches the surface of the sacrificial layer 12 and forms a deposited film 14 on the surface of the sacrificial layer 12 then, a part of the surface of the sacrificial layer 12 is exposed from a minute gap of the deposited film 14. The exposed sacrificial layer 12 is brought into contact with ions and radicals in plasma, so that the sacrificial layer 12 is subjected to reaction and gasification, and is removed from the mask body 11. Thus, the deposited film 14 formed on the surface of the sacrificial layer 12 is cleanly removed from the mask body 11. <P>COPYRIGHT: (C)2013,JPO&INPIT |
