发明名称 |
Semiconductor Device Including First and Second Semiconductor Elements |
摘要 |
A semiconductor device includes a first semiconductor element including a first pn junction between a first terminal and a second terminal. The semiconductor device further includes a semiconductor element including a second pn junction between a third terminal and a fourth terminal. The semiconductor element further includes a semiconductor body including the first semiconductor element and the second semiconductor element monolithically integrated. The first and third terminals are electrically coupled to a first device terminal. The second and fourth terminals are electrically coupled to a second device terminal. A temperature coefficient alpha1 of a breakdown voltage Vbr1 of the first pn junction and a temperature coefficient alpha2 of a breakdown voltage Vbr2 of the second pn junction have a same algebraic sign and satisfy 0.6×alpha1<a2<1.1×alpha1 at T=300 K, wherein Vbr2<Vbr1.
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申请公布号 |
US2013146970(A1) |
申请公布日期 |
2013.06.13 |
申请号 |
US201113314637 |
申请日期 |
2011.12.08 |
申请人 |
HIRLER FRANZ;GLASER ULRICH;LENZHOFER CHRISTIAN;INFINEON TECHNOLOGIES AG |
发明人 |
HIRLER FRANZ;GLASER ULRICH;LENZHOFER CHRISTIAN |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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