发明名称 |
THIN FILM TRANSISTOR DISPLAY PANEL AND MANUFACTURING METHOD THEREOF |
摘要 |
A method for manufacturing a thin film transistor array panel includes forming a gate line and a gate electrode protruding from the gate line on a substrate; forming a gate insulating layer on the gate line and the gate electrode; depositing sequentially a semiconductor material and a metal material on the gate insulating layer; performing a first etching operation on the semiconductor material and the metal material using a first mask to form a semiconductor layer and a metal layer, the metal layer including a data line, a source electrode, and a drain electrode, in which the drain electrode protrudes from the data line, and the source electrode and the drain electrode having an integral shape; and performing a second etching operation on the metal layer using a second mask to divide the source electrode and the drain electrode.
|
申请公布号 |
US2013146864(A1) |
申请公布日期 |
2013.06.13 |
申请号 |
US201213464613 |
申请日期 |
2012.05.04 |
申请人 |
KIM KI-WON;YOON KAP SOO;LEE WOO GEUN;LEE JIN-WON;KWON SE-MYUNG;AHN JUNG OUCK;KIM SI JIN;SAMSUNG DISPLAY CO., LTD. |
发明人 |
KIM KI-WON;YOON KAP SOO;LEE WOO GEUN;LEE JIN-WON;KWON SE-MYUNG;AHN JUNG OUCK;KIM SI JIN |
分类号 |
H01L29/786;H01L21/336;H01L33/08 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|