发明名称 THIN FILM TRANSISTOR DISPLAY PANEL AND MANUFACTURING METHOD THEREOF
摘要 A method for manufacturing a thin film transistor array panel includes forming a gate line and a gate electrode protruding from the gate line on a substrate; forming a gate insulating layer on the gate line and the gate electrode; depositing sequentially a semiconductor material and a metal material on the gate insulating layer; performing a first etching operation on the semiconductor material and the metal material using a first mask to form a semiconductor layer and a metal layer, the metal layer including a data line, a source electrode, and a drain electrode, in which the drain electrode protrudes from the data line, and the source electrode and the drain electrode having an integral shape; and performing a second etching operation on the metal layer using a second mask to divide the source electrode and the drain electrode.
申请公布号 US2013146864(A1) 申请公布日期 2013.06.13
申请号 US201213464613 申请日期 2012.05.04
申请人 KIM KI-WON;YOON KAP SOO;LEE WOO GEUN;LEE JIN-WON;KWON SE-MYUNG;AHN JUNG OUCK;KIM SI JIN;SAMSUNG DISPLAY CO., LTD. 发明人 KIM KI-WON;YOON KAP SOO;LEE WOO GEUN;LEE JIN-WON;KWON SE-MYUNG;AHN JUNG OUCK;KIM SI JIN
分类号 H01L29/786;H01L21/336;H01L33/08 主分类号 H01L29/786
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