| 摘要 |
858,990. Semiconductor rectifiers. SIEMENSSCHUCKERTWERKE A. G. Feb. 20, 1959 [Feb. 21, 1958], No. 5970/59. Class 37 A selenium dry rectifier element has at least one layer of insulating material in its laminated structure, at a place subject to mechanical pressure when the element is assembled and ready for operation, and is characterized in that the insulating layer is formed of a lacquer with finely divided fibrous or similar insulating material particles separately distributed in it. Suitable substances for distributing in the lacquer are asbestos or mica. In the Figure a nickel coated iron plate 1 carries a selenium layer 2 and a counter electrode 3 which is sprayed on to the selenium with the aid of a mask and the insulating layer 4 of lacquer containing finely divided asbestos or mica is applied to the exposed central part of the selenium layer. The edges of counter electrode 3 and the layer 4 are both inclined so that no step occurs at their join. After drying and hardening tapping electrode 5 is applied to the counter electrode. |
