发明名称 INTEGRATED CIRCUIT DEVICES INCLUDING ELECTRODE SUPPORT STRUCTURES AND METHODS OF FABRICATING THE SAME
摘要 A semiconductor device includes a plurality of electrode structures perpendicularly extending on a substrate, and at least one support unit extending between the plurality of electrode structures. The support unit includes at least one support layer including a noncrystalline metal oxide contacting a part of the plurality of electrode structures. Related devices and fabrication methods are also discussed.
申请公布号 US2013147048(A1) 申请公布日期 2013.06.13
申请号 US201213707394 申请日期 2012.12.06
申请人 SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. 发明人 KUH BONG-JIN;YANG SANG-RYOL;JUNG SOON-WOOK;YOU YOUNG-SUB;CHUNG BYUNG-HONG;CHOI HAN-MEI;LIM JONG-SUNG
分类号 H01L23/498 主分类号 H01L23/498
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