发明名称 |
INTEGRATED CIRCUIT DEVICES INCLUDING ELECTRODE SUPPORT STRUCTURES AND METHODS OF FABRICATING THE SAME |
摘要 |
A semiconductor device includes a plurality of electrode structures perpendicularly extending on a substrate, and at least one support unit extending between the plurality of electrode structures. The support unit includes at least one support layer including a noncrystalline metal oxide contacting a part of the plurality of electrode structures. Related devices and fabrication methods are also discussed.
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申请公布号 |
US2013147048(A1) |
申请公布日期 |
2013.06.13 |
申请号 |
US201213707394 |
申请日期 |
2012.12.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KUH BONG-JIN;YANG SANG-RYOL;JUNG SOON-WOOK;YOU YOUNG-SUB;CHUNG BYUNG-HONG;CHOI HAN-MEI;LIM JONG-SUNG |
分类号 |
H01L23/498 |
主分类号 |
H01L23/498 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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