发明名称 |
SIC CRYSTALLINE ON SI SUBSTRATES TO ALLOW INTEGRATION OF GAN AND SI ELECTRONICS |
摘要 |
A silicon substrate with a GaN-based device and a Si-based device on the silicon substrate is provided. The silicon substrate includes the GaN-based device on a SiC crystalline region. The SiC crystalline region is formed in the silicon substrate. The silicon substrate also includes the Si-based device on a silicon region, and the silicon region is next to the SiC crystalline region on the silicon substrate.
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申请公布号 |
US2013146893(A1) |
申请公布日期 |
2013.06.13 |
申请号 |
US201313760496 |
申请日期 |
2013.02.06 |
申请人 |
THEI KONG-BENG;YU JIUN-LEI JERRY;TSAI CHUN LIN;TUAN HSIAO-CHIN;KALNITSKY ALEX;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
THEI KONG-BENG;YU JIUN-LEI JERRY;TSAI CHUN LIN;TUAN HSIAO-CHIN;KALNITSKY ALEX |
分类号 |
H01L27/06 |
主分类号 |
H01L27/06 |
代理机构 |
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