| 摘要 |
A pixel structure and manufacturing method of the same are described. The pixel structure includes a substrate, a switch transistor, a dielectric layer, a conducting connection line, a driving transistor, a capacitor and a pixel electrode. The substrate defines a transistor region and the switch transistor is disposed on the transistor region. The dielectric layer is disposed on the substrate and covers the switch transistor. The conducting connection line disposed on the dielectric layer is located over the transistor region. The driving transistor disposed on the dielectric layer is vertically stacked over the switch transistor and transistor region. The conducting connection line electrically connects the switch transistor to the driving transistor. The pixel electrode is electrically connected to the driving transistor.
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