发明名称 |
Z-Direction Decoding for Three Dimensional Memory Array |
摘要 |
The switch transistors in the NAND strings have combinations of threshold voltage levels that vary across the levels of a three dimensional memory array. A bias arrangement is applied to the select lines electrically coupled to the switch transistors. The NAND strings on a particular level of a three dimensional memory array are selected. The NAND strings on other levels are deselected.
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申请公布号 |
US2013148427(A1) |
申请公布日期 |
2013.06.13 |
申请号 |
US201113324708 |
申请日期 |
2011.12.13 |
申请人 |
LEE GUANRU;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LEE GUANRU |
分类号 |
G11C16/10 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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