POLISHING LIQUID FOR TSV BLOCKING LAYER

摘要

A chemical-mechanical polishing liquid, applicable to a through-silicon-via (TSV) blocking layer, at least comprises an abrasive, a composite copper corrosion inhibitor, a complexing agent, and a silicon nitride modifier. The polishing liquid has a high silicon dioxide removal speed and a low silicon nitride removal speed, so as to implement effective planarization on the blocking layer and stop the silicon nitride layer, so as to form a through-silicon hole, and at the same time not to cause metal corrosion, thereby achieving the high defect correction capability and the low surface pollutant index.