发明名称 |
NON-VOLATILE SEMICONDUCTOR MEMORY AND DATA READING METHOD THEREOF |
摘要 |
PURPOSE: A non-volatile semiconductor memory and a data reading method thereof are provided to read data at high speed by consecutively transmitting the data to a page buffer from a memory array. CONSTITUTION: A memory array(100) includes a plurality of memory cells. A page buffer(160) stores the data transmitted from selected pages according to address information in the memory array. A data register(130) receives the data from the page buffer and outputs the received data in serial according to a clock signal. The memory array includes a first memory plane and a second memory plane. The data of the selected pages of the first memory plane and the second memory plane is simultaneously transmitted to the page buffer. [Reference numerals] (110) I/O buffer; (120) Address register; (130) Data register; (140) Controller; (150) Word line selection circuit; (160) Page buffer/sensor circuit; (170) Column selection circuit; (180) Internal voltage generating circuit; (AA) Control signal
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申请公布号 |
KR20130062864(A) |
申请公布日期 |
2013.06.13 |
申请号 |
KR20120095073 |
申请日期 |
2012.08.29 |
申请人 |
WINBOND ELECTRONICS CORP. |
发明人 |
KAMINAGA TAKEHIRO;YANO MASARU |
分类号 |
G11C16/06;G11C16/26 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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