发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY AND DATA READING METHOD THEREOF
摘要 PURPOSE: A non-volatile semiconductor memory and a data reading method thereof are provided to read data at high speed by consecutively transmitting the data to a page buffer from a memory array. CONSTITUTION: A memory array(100) includes a plurality of memory cells. A page buffer(160) stores the data transmitted from selected pages according to address information in the memory array. A data register(130) receives the data from the page buffer and outputs the received data in serial according to a clock signal. The memory array includes a first memory plane and a second memory plane. The data of the selected pages of the first memory plane and the second memory plane is simultaneously transmitted to the page buffer. [Reference numerals] (110) I/O buffer; (120) Address register; (130) Data register; (140) Controller; (150) Word line selection circuit; (160) Page buffer/sensor circuit; (170) Column selection circuit; (180) Internal voltage generating circuit; (AA) Control signal
申请公布号 KR20130062864(A) 申请公布日期 2013.06.13
申请号 KR20120095073 申请日期 2012.08.29
申请人 WINBOND ELECTRONICS CORP. 发明人 KAMINAGA TAKEHIRO;YANO MASARU
分类号 G11C16/06;G11C16/26 主分类号 G11C16/06
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