| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device manufacturing method which can determine a quality of a silicon carbide semiconductor device by inspecting presence or absence of defects in the silicon carbide semiconductor device more simply and in a shorter time and with higher resolution than in the past and in a state of a wafer before singulation into chips. <P>SOLUTION: A silicon carbide semiconductor device manufacturing method of an embodiment is a manufacturing method of a silicon carbide semiconductor device 100 sequentially including a silicon carbide film 2 and a transparent conductive film as a Schottky electrode 11 on a surface of a silicon carbide substrate 1. The silicon carbide semiconductor device manufacturing method comprises an inspection step of inspecting presence or absence of defects in the silicon carbide semiconductor device by inspecting, through the transparent conductive film, emission of light emitted by application of a reverse bias voltage to between the transparent conductive film and a back electrode 10 arranged on a rear face of the silicon carbide substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
