| 摘要 |
It is intended to provide a solid-state image pickup element capable of reducing an area of a read channel to increase a ratio of a surface area of a light-receiving section to the overall surface area of one pixel. The solid-state image pickup element comprises a first-conductive type planar semiconductor layer (114, 320, 525) formed on a second-conductive type planar semiconductor layer (115, 321, 526), a hole portion (203, 204, 331, 332, 333, 334, 530, 531, 532, 533) formed in the first-conductive type planar semiconductor layer to define a hole therein, a first-conductive type high-concentration impurity region (104, 105, 301, 302, 303, 304, 305, 306, 501, 502, 503, 504) formed in a bottom wall of the hole portion, a first-conductive type high-concentration impurity-doped element isolation region (101, 102, 307, 308, 309, 505, 506) formed in a part of a sidewall of the hole portion and connected to the first-conductive type high-concentration impurity region, a second-conductive type photoelectric conversion region (110, 111, 322, 324, 325, 326, 326, 327, 517, 518, 519, 520) formed beneath the first-conductive type high-concentration impurity region and in a part of a lower region of the remaining part of the sidewall of the hole portion, and adapted to undergo a change in charge amount upon receiving light, a transfer electrode (106, 107, 314, 315, 316, 317, 318, 319, 510, 511, 512, 513, 514, 515, 516) formed on the sidewall of the hole portion through a gate dielectric film, a second-conductive type CCD channel region (108, 109, 310, 311, 312, 313, 507, 508, 509) formed in a top surface of the first-conductive type planar semiconductor layer and in a part of an upper region of the remaining part of the sidewall of the hole portion, and a read channel (112, 113, 335, 336, 337, 338) formed in a region of the first-conductive type planar semiconductor layer sandwiched between the second-conductive type photoelectric conversion region and the second-conductive type CCD channel region. |
