发明名称 |
PROCESS FOR FILLING DEEP TRENCHES IN A SEMICONDUCTOR MATERIAL BODY, AND SEMICONDUCTOR DEVICE RESULTING FROM THE SAME PROCESS |
摘要 |
A process for manufacturing a semiconductor device envisages the steps of: providing a semiconductor material body having at least one deep trench that extends through said body of semiconductor material starting from a top surface thereof; and filling the deep trench via an epitaxial growth of semiconductor material, thereby forming a columnar structure within the body of semiconductor material. The manufacturing process further envisages the step of modulating the epitaxial growth by means of a concurrent chemical etching of the semiconductor material that is undergoing epitaxial growth so as to obtain a compact filling free from voids of the deep trench; in particular, a flow of etching gas is introduced into the same reaction environment as that of the epitaxial growth, wherein a flow of source gas is supplied for the same epitaxial growth.
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申请公布号 |
US2013149838(A1) |
申请公布日期 |
2013.06.13 |
申请号 |
US201313749526 |
申请日期 |
2013.01.24 |
申请人 |
STMICROELECTRONICS S.R.L.;STMICROELECTRONICS S.R.L. |
发明人 |
SAGGIO MARIO GIUSEPPE;MURABITO DOMENICO;FIORE LETTERIO;MORALE GIUSEPPE |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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地址 |
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