发明名称 Methods of Manufacturing Semiconductor Devices
摘要 A method of manufacturing a semiconductor device, the method including: preparing a semiconductor substrate including a mold layer and a support layer disposed on the mold layer; forming multiple holes that pass through the mold layer and the support layer; forming multiple bottom electrodes in the holes; exposing at least a portion of the bottom electrodes by removing at least a portion of the mold layer; removing a portion of the bottom electrodes from an exposed surface of the bottom electrodes; and sequentially forming a dielectric layer and a top electrode layer on the bottom electrodes.
申请公布号 US2013149833(A1) 申请公布日期 2013.06.13
申请号 US201213705320 申请日期 2012.12.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI JAE HYOUNG;PARK KI YEON;KIM JOON;YOO CHA YOUNG;KIM YOUN SOO;KWON HO JUN;KANG SANG YEOL
分类号 H01L49/02 主分类号 H01L49/02
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