发明名称 |
Methods of Manufacturing Semiconductor Devices |
摘要 |
A method of manufacturing a semiconductor device, the method including: preparing a semiconductor substrate including a mold layer and a support layer disposed on the mold layer; forming multiple holes that pass through the mold layer and the support layer; forming multiple bottom electrodes in the holes; exposing at least a portion of the bottom electrodes by removing at least a portion of the mold layer; removing a portion of the bottom electrodes from an exposed surface of the bottom electrodes; and sequentially forming a dielectric layer and a top electrode layer on the bottom electrodes.
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申请公布号 |
US2013149833(A1) |
申请公布日期 |
2013.06.13 |
申请号 |
US201213705320 |
申请日期 |
2012.12.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI JAE HYOUNG;PARK KI YEON;KIM JOON;YOO CHA YOUNG;KIM YOUN SOO;KWON HO JUN;KANG SANG YEOL |
分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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