| 摘要 |
The invention is related to a method of preparing a conducting film on an ultra-thin glass substrate. The preparing method uses magnetron sputtering, setting an initial magnetron sputtering power and/or an initial flow rate of argon to deposit the conducting film, detecting film layer stress of the conducting film by a pressure sensor on provided on the ultra-thin glass substrate, and adjusting a magnetron sputtering power and/or a flow rate of argon gas in real time according to the detected film layer stress, such that an absolute value of the film layer stress is kept below a predetermined value; the ultra-thin glass substrate has a thickness less than 0.1 mm.
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