发明名称 ELECTRODE STRUCTURE FOR LAMINATED METALLIZED THIN FILM CAPACITOR
摘要 <p>An electrode structure for a laminated metallized thin film capacitor, including at least two metallized thin films (1) laminated together, several curve gap strips (15) not covered with a metal coating and having a certain width also being provided in the direction of the laminated metallized thin film capacitor core slice on each metallized thin film (1), so as to locally or completely space apart adjacent metal coating units; the middle portion of the curve gap strip (15) being in the shape of a recess, two sides of a recess (151) forming an alternately distributed shoulder shape; in two adjacent curve gap strips (15), the endpoint at the most raised area of one curve gap strip (15) at least entering into the recess (151) of another curve gap strip (15). The structure enlarges the insulation distance between metallized electrodes with difference potential on the capacitor core slice, and can improve the slice pressure tolerance of the laminated metallized thin film capacitor core.</p>
申请公布号 WO2013082951(A1) 申请公布日期 2013.06.13
申请号 WO2012CN80132 申请日期 2012.08.15
申请人 XIAMEN FARATRONIC CO., LTD;ZHU, JIAN;LIN, JINTAO;CHEN, GUOBIN 发明人 ZHU, JIAN;LIN, JINTAO;CHEN, GUOBIN
分类号 H01G4/33;H01G4/00 主分类号 H01G4/33
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