THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
摘要
<p>PURPOSE: A thin film transistor and a manufacturing method thereof are provided to increase the electron mobility of an active layer by using a sub active layer. CONSTITUTION: A main active layer(53) is electrically connected to a gate electrode. A source electrode(57) is electrically connected to the main active layer. A drain electrode(55) is separated from the source electrode. The drain electrode is electrically connected to the main active layer. A sub active layer(52) is electrically connected to the main active layer.</p>
申请公布号
KR20130062726(A)
申请公布日期
2013.06.13
申请号
KR20110129148
申请日期
2011.12.05
申请人
SAMSUNG DISPLAY CO., LTD.
发明人
NING HONG LONG;KIM, BYEONG BEOM;JEONG, CHANG OH;SHIN, SANG WON;YOO, HYEONG SUK;LI XIN XING;PARK, JOON YONG;KANG, HYUN JU;YANG, SU KYOUNG;KIM, KYUNG SEOP