| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of detecting a fault formed inside a SiC epitaxial layer without breaking a substrate; and provide a manufacturing method of a SiC semiconductor device using the crystal fault detection method. <P>SOLUTION: A crystal fault detection method comprises: (a) a step of preparing a SiC substrate 1 on which a SiC drift layer 2 is formed on a surface; (b) a step of forming a C-rich layer 4 on a surface of the SiC drift layer 2 by annealing the SiC substrate 1; (c) a step of removing the C-rich layer 4 by dry etching after the step (b); and (d) a step of inspecting a fault on the surface of the SiC drift layer 2 after the step (c). <P>COPYRIGHT: (C)2013,JPO&INPIT |
