| 摘要 |
An optoelectronic structure includes a wafer, a plurality of light emitting diode structures on a surface of the wafer, and a coating including a wavelength conversion material on the plurality of light emitting diode structures. The light emitting diode structures and the coating are configured to emit white light in response to electrical energy supplied to the light emitting diode structures. The light emitting diode structures from a single wafer are configured to generate an aggregate light output in excess of 800,000 lumens.
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