| 摘要 |
The invention relates to a process for manufacturing a I/III/VI2 layer having photovoltaic properties, comprising: depositing a metal on a substrate in order to form a contact layer; depositing a precursor of the photovoltaic layer on the contact layer; and carrying out a heat treatment on the precursor while supplying the Group VI element in order to form the I/III/VI2 layer. The Group VI element customarily diffuses into the contact layer (MO) during the heat treatment and combines with the metal to form a surface layer (SUP) on the contact layer. In the process of the invention the metal deposition comprises a step in which an additional element is added to the metal in order to form a compound (MO-EA) in the contact layer, this compound acting as a barrier to diffusion of the Group VI element, thereby making it possible to closely control the properties, especially the thickness, of the surface layer. |
