发明名称 |
Semiconductor Device and Method of Forming UBM Structure on Back Surface of TSV Semiconductor Wafer |
摘要 |
A semiconductor device has a plurality of conductive vias formed through the semiconductor die with a first insulating layer around the conductive vias. A recess is formed in the first insulating layer around the conductive vias by LDA. A portion of the semiconductor wafer is removed by LDA after forming the recess in the first insulating layer so that the conductive vias extend above a surface of the semiconductor wafer. The first insulating layer extends to the surface of the semiconductor wafer or above the surface of the semiconductor wafer. A second insulating layer is formed over the surface of the semiconductor wafer and conductive vias. A first portion of the second insulating layer is removed by LDA, while leaving a second portion of the second insulating layer over the surface of the semiconductor wafer around the conductive vias. An electroless plated bump is formed over the conductive vias. |
申请公布号 |
US2013147036(A1) |
申请公布日期 |
2013.06.13 |
申请号 |
US201113324446 |
申请日期 |
2011.12.13 |
申请人 |
CHOI WON KYOUNG;YONG CHANG BUM;KU JAE HUN;STATS CHIPPAC, LTD. |
发明人 |
CHOI WON KYOUNG;YONG CHANG BUM;KU JAE HUN |
分类号 |
H01L21/768;H01L23/485 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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