CROSS-POINT NONVOLATILE MEMORY AND METHOD FOR FORMING SAME

摘要

A sense amplifier circuit (7) has a load current supply unit (8) for compensating a sneak current the load current supply unit selectively switching and supplying a load current with a different amount of current to a bit line (4) that is selected by a column selection circuit (6). When the amount of current flowing through the bit line (4) selected by the column selection circuit (6) is greater than a reference amount of current, the sense amplifier circuit (7) outputs an 'L' level; and when the amount of current is smaller than the reference amount of current, the sense amplifier circuit (7) outputs an 'H' level. A control circuit (18) adjusts the amount of current for the load current to a prescribed amount of current that causes the sense amplifier circuit (7) to output an 'H' level before a forming pulse is applied to a prescribed memory cell (2) while the prescribed memory cell (2) is selected. Subsequently, the control circuit (18) controls the supply of the prescribed amount of current for the load current and controls a writing circuit (15) so that the writing circuit applies the forming pulse to the prescribed memory cell (2) until the sense amplifier circuit (7) outputs an 'L' level.