发明名称 |
THIN FILM TRANSISTORS, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT-EMITTING DIODE DEVICE USING THE SAME |
摘要 |
Aspects of the invention relate to thin film transistors, a method of fabricating the same, and an organic light-emitting diode device using the same. A thin film transistor according to an aspect of the invention includes a semiconductor layer formed from polysilicon in which a grain size deviation is within a range of substantially ±10%. Accordingly, aspects of the invention can improve non-uniformity of image characteristics due to a non-uniform grain size in polysilicon produced by a sequential lateral solidification (SLS) crystallization process.
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申请公布号 |
US2013149819(A1) |
申请公布日期 |
2013.06.13 |
申请号 |
US201313760683 |
申请日期 |
2013.02.06 |
申请人 |
SAMSUNG DISPLAY CO., LTD.;SAMSUNG DISPLAY CO., LTD. |
发明人 |
KIM KYOUNG-BO;PARK YONG-WOO;JEONG CHANG-YOUNG;DOH SUNG-WON;LEE DAE-WOO;YEO JONG-MO |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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