| 发明名称 |
TRANSISTOR ASSISTED ESD DIODE |
| 摘要 |
An integrated circuit includes a diode/bipolar ESD protection device. The diode/bipolar ESD device includes at least one gate separated ESD diode and at least one gate spaced ESD bipolar transistor coupled in parallel between a fixed voltage and an input/output pin.
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| 申请公布号 |
US2013146978(A1) |
申请公布日期 |
2013.06.13 |
| 申请号 |
US201213709696 |
申请日期 |
2012.12.10 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MAHALINGAM NANDAKUMAR;VENKATARAMAN SUNITHA;CATLETT DAVID |
| 分类号 |
H01L27/02 |
主分类号 |
H01L27/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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