Nichtflüchtige Speichervorrichtung, Programmierungsverfahren für nichtflüchtige Speichervorrichtungen und Speichersystem, das eine nichtflüchtige Speichervorrichtung umfasst

摘要

The method involves determining tendency for change of threshold voltage of first memory cell transistor from program state. A first inspection voltage of several verification voltages is selected in responsive to the determination. A check is made whether the threshold voltage of first memory cell transistor is sufficiently changed using first verification voltage. The threshold voltage of the first memory cell transistor is changed via first peripheral. An independent claim is included for non-volatile memory device.