| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a passive matrix type element as a semiconductor device that can solve the crosstalk, and a manufacturing method for the same. <P>SOLUTION: A memory configuration includes a pair of electrodes 110 and 113, a layer 112 containing an organic compound formed between the pair of electrodes, and a first layer 111 including a first metal oxide and a second layer 114 including a second metal oxide which are provided between the pair of electrodes. The first metal oxide layer 111 serves as a p-type semiconductor layer, and the second metal oxide layer serves as an n-type semiconductor layer. The first layer 111 including the first metal oxide and the second layer 114 including the second metal oxide form p-n junction, thereby providing a memory element with rectifying property. <P>COPYRIGHT: (C)2013,JPO&INPIT |
