发明名称 CIRCUIT FOR DRIVING INDUCTIVE LOAD
摘要 <P>PROBLEM TO BE SOLVED: To solve the problem in which even the use of a parallel connection of a Schottky barrier diode DSB# (#=p,n) and a PiN diode DPN# as a freewheeling diode cannot necessarily reduce a surge voltage. <P>SOLUTION: A semiconductor chip TDp constituting a PiN diode DPNp is connected to an output side wire Lo via a bonding wire WD1, an inductance element 20 and a bonding wire WD2. A semiconductor chip TSp constituting a Schottky barrier diode DSBp is, on the other hand, connected to the output side wire Lo via a bonding wire WS. The inductance element 20 thus provided sets a higher inductance on the path for the PiN diode DPNp. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013118540(A) 申请公布日期 2013.06.13
申请号 JP20110265404 申请日期 2011.12.05
申请人 DENSO CORP 发明人 NIIMURA KOSUKE;YAMAGUCHI YOSHIHISA
分类号 H03K17/16;H02M1/00;H03K17/56 主分类号 H03K17/16
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