METHOD FOR MANUFACTURING CHROMIUM SIDEWALL ATTENUATION TYPE PHASE-SHIFTING MASK USED IN EUV LITHOGRAPHY

摘要

A method for manufacturing chromium sidewall attenuation type phase-shifting mask used in EUV lithography comprises the following steps: first making a multilayer film reflector according to the manufacturing method of a conventional EUV lithographic mask; then making a phase-shifting layer structure on electron beam resist using micro-nano processing technology, and depositing absorber material chromium in a large area; at last etching the absorber material chromium anisotropically, only leaving the chromium sidewall of the attenuation type phase-shifting layer material, and thus obtaining the chromium sidewall attenuation type phase-shifting mask used in EUV lithography. The chromium sidewall attenuation type phase-shifting mask is obtained by one time of electron beam exposure, two times of magnetron sputtering deposition of the multilayer reflector and the phase-shifting layer, one time of atomic layer deposition of the chromium material in a large area, and one time of anisotropic etching of the chromium material. The exposure shadow and the diffraction effect in EUV lithography are depressed due to the adding of the chromium sidewall at the two sides of the phase-shifting layer, and a more efficient function of resolution increasing is obtained comparing to the conventional attenuation type phase-shifting mask.