| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus that makes temperature inside a workpiece surface more even. <P>SOLUTION: The plasma CVD apparatus 1 for producing a thin film on a workpiece 30 in a chamber 10 includes: a heater 11 for heating the workpiece 30, and formed of divided heaters 11a, 11b, and 11c for adjusting the temperature of each of a plurality of divided areas of the workpiece surface; a plurality of sensors 12a, 12b, and 12c for detecting at least one of an amount of warping of the workpiece surface and a temperature of the workpiece surface; and a control unit 20 for measuring a warped area of the workpiece surface or an area with uneven temperature distribution according to the detection results of the plurality of sensors, and controlling the temperatures of the divided heaters for heating the areas to thereby adjust uneven temperature distribution inside the workpiece surface. <P>COPYRIGHT: (C)2013,JPO&INPIT |
