发明名称 CHARGED PARTICLE BEAM LITHOGRAPHY METHOD AND CHARGED PARTICLE BEAM LITHOGRAPHY DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To suppress a decrease in availability of a charged particle beam lithography device. <P>SOLUTION: The charged particle beam lithography device is provided with means of performing proximity effect correction operation of an external processing device and shot division in advance, and then generating shot order correction value data in which proximity effect correction values by shots are arranged in order based upon shot division data and a result of the proximity effect correction operation. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013118304(A) 申请公布日期 2013.06.13
申请号 JP20110265492 申请日期 2011.12.05
申请人 JEOL LTD 发明人 FUSE RIKIE;KAWASE YUICHI;WAKATSUKI TETSUYOSHI
分类号 H01L21/027;H01J37/305 主分类号 H01L21/027
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