发明名称 METAL SILICIDE NANOWIRE ARRAYS FOR ANTI-REFLECTIVE ELECTRODES IN PHOTOVOLTAICS
摘要 <p>A method of fabricating single-crystalline metal silicide nanowires for anti-reflective electrodes for photovoltaics is provided that includes exposing a surface of a metal foil to oxygen or hydrogen at an elevated temperature, and growing metal silicide nanowires on the metal foil surface by flowing a silane gas mixture over the metal foil surface at the elevated temperature, where spontaneous growth of the metal silicide nanowires occur on the metal foil surface, where the metal silicide nanowires are post treated for use as an electrode in a photovoltaic cell or used directly as the electrode in the photovoltaic cell.</p>
申请公布号 WO2013086482(A1) 申请公布日期 2013.06.13
申请号 WO2012US68704 申请日期 2012.12.10
申请人 THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY;HONDA PATENTS & TECHNOLOGIES NORTH AMERICA, LLC 发明人 DASGUPTA, NEIL;JUNG, HEE, JOON;IANCU, ANDREI;FASCHING, RAINER, J.;PRINZ, FRIEDRICH, B.;IWADATE, HITOSHI;XU, SHICHENG
分类号 H01L31/18;B82B3/00;B82Y40/00 主分类号 H01L31/18
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