发明名称 SYSTEM AND METHOD FOR ION IMPLANTATION WITH IMPROVED PRODUCTIVITY AND UNIFORMITY
摘要 A scanning system including a scanning element, a beam profiler, analysis system, and a ZFE-limiting element, is disclosed. The scanning element is configured to scan an ion beam over an ion beam scan path. The beam profiler measures beam current of the ion beam as it is scanned over the ion beam scan path, and the analysis system analyzes the measured beam current to detect a ZFE condition. The ZFE-limiting element, which is upstream of the beam profiler and is coupled to the analysis system via a feedback path, is configured to selectively apply an electric field to the scanned ion beam based on whether the ZFE condition is detected. The selectively applied electric field induces a change in the scanned beam to limit the ZFE condition.
申请公布号 US2013146760(A1) 申请公布日期 2013.06.13
申请号 US201113324050 申请日期 2011.12.13
申请人 EISNER EDWARD C.;VANDERBERG BO H.;AXCELIS TECHNOLOGIES, INC. 发明人 EISNER EDWARD C.;VANDERBERG BO H.
分类号 G21K5/04;G21K5/00 主分类号 G21K5/04
代理机构 代理人
主权项
地址