发明名称 |
HIGH QUALITY GAN HIGH-VOLTAGE HFETS ON SILICON |
摘要 |
Substrates of GaN over silicon suitable for forming electronics devices such as heterostructure field effect transistors (HFETs), and methods of making the substrates, are disclosed. Voids in a crystalline Al2O3 film on a top surface of a silicon wafer are formed. The top surface of the silicon wafer is along the <111> silicon crystal orientation. A plurality of laminate layers is deposited over the voids and the Al2O3 film. Each laminate layer includes an AlN film and a GaN film. A transistor or other device may be formed in the top GaN film.
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申请公布号 |
US2013146863(A1) |
申请公布日期 |
2013.06.13 |
申请号 |
US201113316305 |
申请日期 |
2011.12.09 |
申请人 |
RAMDANI JAMAL;EDWARDS JOHN P.;LIU LINLIN |
发明人 |
RAMDANI JAMAL;EDWARDS JOHN P.;LIU LINLIN |
分类号 |
H01L29/22;H01L21/20 |
主分类号 |
H01L29/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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