SOLID-STATE IMAGE CAPTURING ELEMENT AND IMAGE CAPTURING DEVICE PROVIDED WITH SAME

摘要

A solid-state image capturing device (1) comprises a semiconductor substrate (10) provided thereon with: a plurality of unit pixels (11) to generate pixel signals; comparison circuits (16) respectively connected to the rows of the plurality of unit pixels (11) to compare a comparison potential with the pixel signals; a D/A conversion circuit (13) which generates the comparison potential and commonly supplies the generated comparison potential to the comparison circuits (16) at the respective rows; and a D/A conversion circuit output unit (15) provided on a common wire (14) for supplying the comparison potential from the D/A conversion circuit (13) to the comparison circuits (16) at the respective rows. The D/A conversion circuit output unit (15) comprises: a source follower circuit (41) which is provided on the wire (14) and which comprises a first load current source (43) having a transistor, and an amplifier transistor (42) having a thinner gate oxide film than that of the transistor; and a voltage control circuit (44) which controls the drain-source voltage of the amplifier transistor (42).