发明名称 FOLDERBLE THIN FILM TRANSISTOR
摘要 <p>PURPOSE: A foldable thin film transistor is provided to maintain excellent device characteristic by using a channel layer of nanofiber and a gate insulating layer of resin including ionic liquid. CONSTITUTION: A source electrode and a drain electrode are separated from each other on a foldable substrate. A channel layer(130) is made of the nanofiber of an organic semiconductor. A gate electrode(150) is electrically insulated from the source electrode, the drain electrode, and the channel layer. A gate insulating layer(140) is located between the channel layer and the gate electrode. The gate insulating layer includes the mixture of resin and ionic liquid.</p>
申请公布号 KR20130062734(A) 申请公布日期 2013.06.13
申请号 KR20110129157 申请日期 2011.12.05
申请人 SAMSUNG ELECTRONICS CO., LTD.;INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY 发明人 PARK, JONG JIN;LM, JUNG KYUN;CHOONG CHWEE LIN;JEONG, UN YONG;SHIN, MIN KWAN
分类号 H01L29/786;H01L21/336 主分类号 H01L29/786
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