发明名称 |
SEMICONDUCTOR DEVICE INCLUDING STEPPED GATE ELECTRODE AND FABRICATION METHOD THEREOF |
摘要 |
Disclosed are a semiconductor device including a stepped gate electrode and a method of fabricating the semiconductor device. The semiconductor device according to an exemplary embodiment of the present disclosure includes: a semiconductor substrate having a structure including a plurality of epitaxial layers and including an under-cut region formed in a part of a Schottky layer in an upper most part thereof; a cap layer, a first nitride layer and a second nitride layer sequentially formed on the semiconductor substrate to form a stepped gate insulating layer pattern; and a stepped gate electrode formed by depositing a heat-resistant metal through the gate insulating layer pattern, wherein the under-cut region includes an air-cavity formed between the gate electrode and the Schottky layer.
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申请公布号 |
US2013146944(A1) |
申请公布日期 |
2013.06.13 |
申请号 |
US201213592589 |
申请日期 |
2012.08.23 |
申请人 |
YOON HYUNG SUP;MIN BYOUNG-GUE;LEE JONG MIN;KIM SEONG-II;KANG DONG MIN;AHN HO KYUN;LIM JONG-WON;MUN JAE KYOUNG;NAM EUN SOO;ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
YOON HYUNG SUP;MIN BYOUNG-GUE;LEE JONG MIN;KIM SEONG-II;KANG DONG MIN;AHN HO KYUN;LIM JONG-WON;MUN JAE KYOUNG;NAM EUN SOO |
分类号 |
H01L29/812;H01L21/338 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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