发明名称 Semiconductor Devices and Methods of Manufacturing the Same
摘要 Semiconductor devices include lower interconnections, upper interconnections crossing over the lower interconnections, selection components disposed at crossing points of the lower interconnections and the upper interconnections, respectively, and memory components disposed between the selection components and the upper interconnections. Each of the selection components may include a semiconductor pattern having a first sidewall and a second sidewall. The first sidewall of the semiconductor pattern may have a first upper width and a first lower width that is greater than the first upper width. The second sidewall of the semiconductor pattern may have a second upper width and a second lower width that is substantially equal to the second upper width.
申请公布号 US2013146830(A1) 申请公布日期 2013.06.13
申请号 US201213668489 申请日期 2012.11.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HAN JAEJONG;KWON SUNGUN;BAE JINHYE;LEE KONGSOO;JEONG SEONG HOON;KANG YOONGOO;AN HY-KYUN
分类号 H01L45/00;H01L29/06;H01L29/82 主分类号 H01L45/00
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