发明名称 APPARATUS FOR FORMING CIGS LAYER
摘要 <p>PURPOSE: An apparatus for forming a CIGS(Cu In1-x Gax Se2) layer is provided to prevent the deformation of a chamber by forming an inner wall and a corner which have round edge parts. CONSTITUTION: A wall(110) includes a rectangular inner wall(111) and an outer wall. A gateway is formed in the lower side of the inner wall. The outer wall covers the upper and side parts of the inner wall. A door(121) opens the gateway. The edges of the upper and side parts are rounded.</p>
申请公布号 KR101274130(B1) 申请公布日期 2013.06.13
申请号 KR20110083193 申请日期 2011.08.22
申请人 发明人
分类号 H01L31/18;H01L31/042;H01L31/0445 主分类号 H01L31/18
代理机构 代理人
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