| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a production method of a group III nitride crystal producible of the group III nitride crystal having uniform region of low dislocation density over a wide range at low cost. <P>SOLUTION: There is disclosed a production method of a group III nitride semiconductor crystal by growing the group III nitride semiconductor crystal on a seed crystal by a vapor-phase epitaxial method, in which growth surfaces of the group III nitride semiconductor crystal are configured with only a plurality of surfaces not orthogonal to the growing direction on the seed crystal, and the method includes a convex growth step in which the growth surfaces composed of the plurality of surfaces grow while forming a convex shape as a whole. <P>COPYRIGHT: (C)2013,JPO&INPIT |
