发明名称 SOLID, MULTI-STATE MOLECULAR RANDOM ACCESS MEMORY
摘要 A solid-state, multi-valued, molecular random access memory (RAM) device, comprising an electrically, optically and/or magnetically addressable unit, a memory reader, and a memory writer. The addressable unit comprises a conductive substrate; one or more layers of electrochromic, magnetic, redox-active, and/or photochromic materials deposited on the conductive substrate; and a conductive top layer deposited on top the one or more layers. The memory writer applies a plurality of predetermined values of potential biases or optical signals or magnetic fields to the unit, wherein each predetermined value applied results in a uniquely distinguishable optical, magnetic and/or electrical state of the unit, thus corresponding to a unique logical value. The memory reader reads the optical, magnetic and/or electrical state of the unit.
申请公布号 US2013148413(A1) 申请公布日期 2013.06.13
申请号 US201113696854 申请日期 2011.05.11
申请人 VAN DER BOOM MILKO E.;DE RUITER GRAHAM;YEDA RESEARCH AND DEVELOPMENT CO. LTD 发明人 VAN DER BOOM MILKO E.;DE RUITER GRAHAM
分类号 G11C11/56;H01L21/02 主分类号 G11C11/56
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