发明名称 SEMICONDUCTOR STRUCTURE WITH ENHANCED CAP AND FABRICATION METHOD THEREOF
摘要 A semiconductor structure includes a substrate, a feature on the substrate, a spacer on a sidewall surface of the feature, and an enhanced cap disposed on an upper surface of the spacer. The enhanced cap compensates the thinner upper portion of the spacer.
申请公布号 US2013146966(A1) 申请公布日期 2013.06.13
申请号 US201113313016 申请日期 2011.12.07
申请人 HO CHIA-YEN 发明人 HO CHIA-YEN
分类号 H01L29/78 主分类号 H01L29/78
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