发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
A semiconductor device includes a first device isolation pattern defining a first active region, a second device isolation pattern defining a second active region, a first gate disposed on the first active region, the first gate including a gate insulating pattern of a first thickness and a second gate disposed on the second active region, the second gate including a gate insulating pattern of a second thickness greater than the first thickness. A top surface of the first device isolation pattern is curved down toward the first active region such that the first active region has an upper portion protruded from the top surface and rounded corners.
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申请公布号 |
US2013149835(A1) |
申请公布日期 |
2013.06.13 |
申请号 |
US201213690456 |
申请日期 |
2012.11.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SON YANGSOO;MOON HYERIM;CHO HAGJU;HAN JEONGNAM;HONG JOON GOO |
分类号 |
H01L29/40 |
主分类号 |
H01L29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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