| 摘要 |
<p>A method for manufacturing a semiconductor device, comprising: a step for preparing a substrate, made from silicon carbide, having n-type regions (14, 17) so as to include the principal surface; a step for forming p-type regions (15, 16) in a region including the principal surface; a step for heating the substrate in which the p-type regions (15, 16) are formed at a temperature of no less than 1250ºC, and thereby forming an oxide film (20) on the principal surface from the n-type regions (14, 17) across the p-type regions (15, 16); a step for removing the oxide film (20) so that at least a part of the principal surfaced is exposed; and a step for forming a Schottky electrode (50) on and in contact with the principal surface that is exposed by the removal of the oxide film (20).</p> |
