| 摘要 |
A semiconductor structure (1300) comprising a first semiconductor layer, a bulk semiconductor layer, an insulation layer between the first semiconductor layer and the bulk semiconductor layer, a first implanted region (1220) that is at least partially within the insulation layer; and a second doped region (1310) that is at least partially within the bulk semiconductor layer, wherein the first implanted region (1220) has an implant profile that shows a maximum within the insulation layer and a tail extending within the bulk semiconductor layer so as to inhibit the diffusion of a second doping material of the second doped region (1310) within the insulation layer. |
