| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To ensure the long-term reliability of a power semiconductor device. <P>SOLUTION: Strain gauge circuit 201, 202 are formed in an area near power semiconductor elements 151, 152 including regions of the power semiconductor elements 151, 152 such upper surfaces of the power semiconductor elements 151, 152. Strain gauge coat layers 221, 222 are formed of an elastic material in the surfaces of the strain gage circuits 201, 202. The strain gage circuits 201, 202 measure a strain amount in an area near the power semiconductor elements 151, 152 generated by a thermal stress of a junction part solder layer of the power semiconductor element 151, 152. The state of fatigue characteristic of the power semiconductor elements 151, 152 is monitored by using the measured strain amount, thus ensuring long-term reliability. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
