| 摘要 |
A high electron mobility transistor comprising: an epitaxial substrate comprising a semi-insulating substrate, a buffer layer and a barrier layer sequentially stacked; a first and a second current conducting electrode formed on, and in ohmic contact with, the barrier layer; a control gate and one or more field plate electrode(s) formed on, and in contact with, the barrier layer between the first and second current conducting electrodes; and an electric circuit formed for electrically connecting each field plate electrode to an electric reference potential and comprising at least a rectifying contact and/or an electric resistor, wherein the rectifying contact is formed outside the channel area of the high electron mobility transistor and is distinguished from the rectifying contact formed by the corresponding field plate electrode. |
