发明名称 |
PHOTOVOLTAIC MODULES HAVING A BUILT-IN BYPASS DIODE AND METHODS FOR MANUFACTURING PHOTOVOLTAIC MODULES HAVING A BUILT-IN BYPASS DIODE |
摘要 |
<p>A photovoltaic device includes: a substrate; lower and upper electrode layers disposed above the substrate; and a semiconductor layer disposed between the lower and upper electrode layers, the semiconductor layer absorbing incident light to excite electrons from the semiconductor layer, wherein the semiconductor layer includes a built-in bypass diode extending between and coupled with the lower and upper electrode layers, the bypass diode permitting electric current to flow through the bypass diode when a reverse bias is applied across the lower and upper electrode layers.</p> |
申请公布号 |
EP2601686(A1) |
申请公布日期 |
2013.06.12 |
申请号 |
EP20110847698 |
申请日期 |
2011.07.18 |
申请人 |
THINSILICON CORPORATION |
发明人 |
COAKLEY, KEVIN;HUSSEN, GULEID;STEPHENS, JASON |
分类号 |
H01L31/042;H01L31/18 |
主分类号 |
H01L31/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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