发明名称 PHOTOVOLTAIC MODULES HAVING A BUILT-IN BYPASS DIODE AND METHODS FOR MANUFACTURING PHOTOVOLTAIC MODULES HAVING A BUILT-IN BYPASS DIODE
摘要 <p>A photovoltaic device includes: a substrate; lower and upper electrode layers disposed above the substrate; and a semiconductor layer disposed between the lower and upper electrode layers, the semiconductor layer absorbing incident light to excite electrons from the semiconductor layer, wherein the semiconductor layer includes a built-in bypass diode extending between and coupled with the lower and upper electrode layers, the bypass diode permitting electric current to flow through the bypass diode when a reverse bias is applied across the lower and upper electrode layers.</p>
申请公布号 EP2601686(A1) 申请公布日期 2013.06.12
申请号 EP20110847698 申请日期 2011.07.18
申请人 THINSILICON CORPORATION 发明人 COAKLEY, KEVIN;HUSSEN, GULEID;STEPHENS, JASON
分类号 H01L31/042;H01L31/18 主分类号 H01L31/042
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