发明名称 |
Semiconductor device having isolation trenches |
摘要 |
<p>A semiconductor uses an isolation trench, and one or more additional trenches to those required for isolation are provided. These additional trenches can be connected between a transistor gate and the drain to provide additional gate-drain capacitance, or else they can be used to form series impedance coupled to the transistor gate. These measures can be used separately or in combination to reduce the switching speed and thereby reduce current spikes.</p> |
申请公布号 |
EP2602828(A1) |
申请公布日期 |
2013.06.12 |
申请号 |
EP20110192471 |
申请日期 |
2011.12.07 |
申请人 |
NXP B.V. |
发明人 |
RUTTER, PHIL;CULSHAW, IAN;PEAKE, STEVEN |
分类号 |
H01L29/78;H01L29/739 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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