PROCESS FOR PRODUCTION OF SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a high-quality semiconductor device having stable characteristics is provided. The method for manufacturing the semiconductor device includes the steps of: preparing a silicon carbide layer (2 to 4) having a main surface; forming a trench (16) in the main surface by removing a portion of the silicon carbide layer (2 to 4); and removing a portion of a side wall of the trench (16) by thermal etching.