| 摘要 |
<p>A method of making a high density indium tin oxide (ITO) sputtering target by forming an aqueous slip comprising greater than 80 % by weight ITO powder and a sintering aid in the form of an arsenic, antinony, bismuth, selenium, tellurium and/or boron compound. Example sintering aids are: arsenic (III) oxide, bismuth (III) oxide, boric acid, tellurium (IV) oxide, indium (III) arsenide, indium (III) antimonide, indium (III) selenide, indium (III) telluride, bismuth (III) phosphate or boron (III) phosphate, present in an amount of 0.001-1 % by weight of dry ITO powder. The slip can be cast into a porous plaster of paris or polymer mould and formed into a green body, or it can be spray dried to produce powder and cold pressed. The initial ITO powder is made by calcining a mixture of indium and tin hydroxide powders in air.</p> |
